Technische Details JANTX2N7335 IR
Description: MOSFET 4P-CH 100V 0.75A MO-036AB, Packaging: Bulk, Package / Case: 14-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Configuration: 4 P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 750mA, Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: MO-036AB.
Weitere Produktangebote JANTX2N7335
Foto | Bezeichnung | Hersteller | Beschreibung |
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JANTX2N7335 | Hersteller : Microsemi Corporation |
![]() Packaging: Bulk Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 4 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 750mA Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: MO-036AB |
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