JANTX1N6474US/TR Microchip Technology
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Technische Details JANTX1N6474US/TR Microchip Technology
Description: TVS DIODE 30.5VWM 47.5VC G-MELF, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, C, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 175°C (TA), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 32A, Voltage - Reverse Standoff (Typ): 30.5V, Supplier Device Package: D-5C, Unidirectional Channels: 1, Voltage - Breakdown (Min): 33V, Voltage - Clamping (Max) @ Ipp: 47.5V, Power - Peak Pulse: 1500W (1.5kW), Power Line Protection: No, Grade: Military, Qualification: MIL-PRF-19500/552.
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| JANTX1N6474US/TR | Hersteller : Microchip Technology |
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JANTX1N6474US/TR | Hersteller : Microchip Technology |
Description: TVS DIODE 30.5VWM 47.5VC G-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, C Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TA) Applications: General Purpose Current - Peak Pulse (10/1000µs): 32A Voltage - Reverse Standoff (Typ): 30.5V Supplier Device Package: D-5C Unidirectional Channels: 1 Voltage - Breakdown (Min): 33V Voltage - Clamping (Max) @ Ipp: 47.5V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500/552 |
Produkt ist nicht verfügbar |
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| JANTX1N6474US/TR | Hersteller : Microchip / Microsemi |
ESD Protection Diodes / TVS Diodes 33V Uni-Directional TVS SQ SMT TR |
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