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JANTX1N5615/TR Microchip Technology
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Technische Details JANTX1N5615/TR Microchip Technology
Description: DIODE GEN PURP 200V 1A A-PAK, Packaging: Tape & Reel (TR), Package / Case: A, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Capacitance @ Vr, F: 45pF @ 12V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: A, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A, Current - Reverse Leakage @ Vr: 500 nA @ 200 V, Grade: Military, Qualification: MIL-PRF-19500/429.
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JANTX1N5615/TR | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 200V 1A A-PAK Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 12V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Grade: Military Qualification: MIL-PRF-19500/429 |
Produkt ist nicht verfügbar |
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JANTX1N5615/TR | Hersteller : Microchip / Microsemi |
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Produkt ist nicht verfügbar |