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JANTX1N5186 Microchip Technology
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Lieferzeit 14-21 Tag (e)
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Technische Details JANTX1N5186 Microchip Technology
Description: DIODE GEN PURP 100V 3A AXIAL, Packaging: Bulk, Package / Case: B, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: B, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A, Current - Reverse Leakage @ Vr: 2 µA @ 100 V, Qualification: MIL-PRF-19500/424.
Weitere Produktangebote JANTX1N5186
Foto | Bezeichnung | Hersteller | Beschreibung |
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JANTX1N5186 | Hersteller : Sensitron Semiconductors |
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JANTX1N5186 | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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JANTX1N5186 | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V Qualification: MIL-PRF-19500/424 |
Produkt ist nicht verfügbar |
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JANTX1N5186 | Hersteller : Microchip / Microsemi |
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Produkt ist nicht verfügbar |