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JANTX1N3911R Microchip Technology
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Technische Details JANTX1N3911R Microchip Technology
Description: DIODE GEN PURP 200V 50A DO203AB, Packaging: Bulk, Package / Case: DO-203AB, DO-5, Stud, Mounting Type: Stud Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Reverse Polarity, Current - Average Rectified (Io): 50A, Supplier Device Package: DO-203AB (DO-5), Operating Temperature - Junction: -65°C ~ 150°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A, Current - Reverse Leakage @ Vr: 15 µA @ 200 V, Qualification: MIL-PRF-19500/308.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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JANTX1N3911R | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 50A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A Current - Reverse Leakage @ Vr: 15 µA @ 200 V Qualification: MIL-PRF-19500/308 |
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JANTX1N3911R | Hersteller : Microchip / Microsemi |
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