JANSR2N3700UB Microchip Technology
Hersteller: Microchip Technology
Description: TRANS NPN 80V 1A UB
Packaging: Tray
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/391
Description: TRANS NPN 80V 1A UB
Packaging: Tray
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/391
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details JANSR2N3700UB Microchip Technology
Description: TRANS NPN 80V 1A UB, Packaging: Tray, Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V, Supplier Device Package: UB, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 500 mW, Grade: Military, Qualification: MIL-PRF-19500/391.
Weitere Produktangebote JANSR2N3700UB
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| JANSR2N3700UB | Hersteller : Microchip / Microsemi |
 Bipolar Transistors - BJT RH Small-Signal BJT |
Produkt ist nicht verfügbar |