JANS2N3501 Microchip / Microsemi
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 103.8 EUR |
10+ | 103.4 EUR |
25+ | 103.08 EUR |
100+ | 103.05 EUR |
250+ | 96.41 EUR |
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Technische Details JANS2N3501 Microchip / Microsemi
Description: TRANS NPN 150V 0.3A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-39, Grade: Military, Current - Collector (Ic) (Max): 300 mA, Voltage - Collector Emitter Breakdown (Max): 150 V, Power - Max: 1 W, Qualification: MIL-PRF-19500/366.
Weitere Produktangebote JANS2N3501
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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JANS2N3501 | Hersteller : Microchip Technology | Trans GP BJT NPN 150V 0.3A 1000mW 3-Pin TO-39 Tray |
Produkt ist nicht verfügbar |
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JANS2N3501 | Hersteller : Microchip Technology |
Description: TRANS NPN 150V 0.3A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 Grade: Military Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 1 W Qualification: MIL-PRF-19500/366 |
Produkt ist nicht verfügbar |