JANS1N5807 Microchip Technology
Hersteller: Microchip Technology
Description: DIODE GEN PURP 50V 6A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 50V 6A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Qualification: MIL-PRF-19500/477
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Technische Details JANS1N5807 Microchip Technology
Description: DIODE GEN PURP 50V 6A B AXIAL, Packaging: Bulk, Package / Case: B, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Current - Average Rectified (Io): 6A, Supplier Device Package: B, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A, Qualification: MIL-PRF-19500/477.
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Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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JANS1N5807 | Hersteller : Microchip / Microsemi |
 Rectifiers 50V 3A UFR,FRR THT |
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