JANS1N3595US Microchip / Microsemi
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 94.39 EUR |
5000+ | 87.56 EUR |
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Technische Details JANS1N3595US Microchip / Microsemi
Description: DIODE GEN PURP 200MA B SQ-MELF, Packaging: Bulk, Package / Case: SQ-MELF, B, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 3 µs, Technology: Standard, Current - Average Rectified (Io): 200mA, Supplier Device Package: B, SQ-MELF, Operating Temperature - Junction: -65°C ~ 150°C, Grade: Military, Part Status: Active, Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA, Current - Reverse Leakage @ Vr: 1 nA @ 125 V, Qualification: MIL-S-19500-241.
Weitere Produktangebote JANS1N3595US nach Preis ab 154.46 EUR bis 154.46 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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JANS1N3595US | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 200MA B SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Part Status: Active Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 nA @ 125 V Qualification: MIL-S-19500-241 |
auf Bestellung 370 Stücke: Lieferzeit 10-14 Tag (e) |
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