Technische Details JAN2N6770T1 MICROSEMI
Description: MOSFET N-CH 500V 12A TO254AA, Packaging: Bulk, Package / Case: TO-254-3, TO-254AA (Straight Leads), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V, Power Dissipation (Max): 4W (Ta), 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-254AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Grade: Military, Qualification: MIL-PRF-19500/543.
Weitere Produktangebote JAN2N6770T1
Foto | Bezeichnung | Hersteller | Beschreibung |
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JAN2N6770T1 | Hersteller : Microsemi Corporation |
Description: MOSFET N-CH 500V 12A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-254AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Grade: Military Qualification: MIL-PRF-19500/543 |
Produkt ist nicht verfügbar |
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JAN2N6770T1 | Hersteller : Microchip / Microsemi | MOSFET Power Mosfet |
Produkt ist nicht verfügbar |