Technische Details JAN2N6758 IR/MOT
Description: MOSFET N-CH 200V 9A TO204AA, Packaging: Bulk, Package / Case: TO-204AA, TO-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 490mOhm @ 9A, 10V, Power Dissipation (Max): 4W (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-204AA (TO-3), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V.
Weitere Produktangebote JAN2N6758
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| JAN2N6758 | Hersteller : Microsemi Corporation |
 Description: MOSFET N-CH 200V 9A TO204AAPackaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 490mOhm @ 9A, 10V Power Dissipation (Max): 4W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-204AA (TO-3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V |
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