Technische Details JAN2N6756 MOT
Description: MOSFET N-CH 100V 14A TO204AA, Packaging: Bulk, Package / Case: TO-204AA, TO-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 14A, 10V, Power Dissipation (Max): 4W (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-204AA (TO-3), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Grade: Military, Qualification: MIL-PRF-19500/542.
Weitere Produktangebote JAN2N6756
Foto | Bezeichnung | Hersteller | Beschreibung |
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JAN2N6756 | Hersteller : IR/MOT |
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auf Bestellung 850 Stücke: Lieferzeit 21-28 Tag (e) |
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JAN2N6756 | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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JAN2N6756 | Hersteller : Microsemi Corporation |
![]() Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 14A, 10V Power Dissipation (Max): 4W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-204AA (TO-3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Grade: Military Qualification: MIL-PRF-19500/542 |
Produkt ist nicht verfügbar |