Technische Details JAN2N3999 MOTOROLA
Description: TRANS NPN 80V 10A TO59, Packaging: Bulk, Package / Case: TO-210AA, TO-59-4, Stud, Mounting Type: Stud Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V, Supplier Device Package: TO-59, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 2 W.
Weitere Produktangebote JAN2N3999
Foto | Bezeichnung | Hersteller | Beschreibung |
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JAN2N3999 | Hersteller : Microchip Technology |
Description: TRANS NPN 80V 10A TO59 Packaging: Bulk Package / Case: TO-210AA, TO-59-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V Supplier Device Package: TO-59 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
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JAN2N3999 | Hersteller : Microchip / Microsemi | Bipolar Transistors - BJT Power BJT |
Produkt ist nicht verfügbar |