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JAN2N3700 Microchip / Microsemi
auf Bestellung 137 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 6.74 EUR |
500+ | 6.25 EUR |
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Technische Details JAN2N3700 Microchip / Microsemi
Description: TRANS NPN 80V 1A TO18, Packaging: Bulk, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V, Supplier Device Package: TO-18, Grade: Military, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 500 mW, Qualification: MIL-PRF-19500/391.
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JAN2N3700 | Hersteller : MOTOROLA |
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JAN2N3700 | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Supplier Device Package: TO-18 Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 500 mW Qualification: MIL-PRF-19500/391 |
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