Produkte > MICROCHIP TECHNOLOGY > JAN1N6472US/TR
JAN1N6472US/TR

JAN1N6472US/TR Microchip Technology


11067-sd51a-datasheet Hersteller: Microchip Technology
Description: TVS DIODE 15VWM 26.5VC G-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, G
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 322A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: G-MELF (D-5C)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.4V
Voltage - Clamping (Max) @ Ipp: 26.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/552
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details JAN1N6472US/TR Microchip Technology

Description: TVS DIODE 15VWM 26.5VC G-MELF, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, G, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 322A (8/20µs), Voltage - Reverse Standoff (Typ): 15V, Supplier Device Package: G-MELF (D-5C), Unidirectional Channels: 1, Voltage - Breakdown (Min): 16.4V, Voltage - Clamping (Max) @ Ipp: 26.5V, Power - Peak Pulse: 1500W (1.5kW), Power Line Protection: No, Grade: Military, Qualification: MIL-PRF-19500/552.

Weitere Produktangebote JAN1N6472US/TR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
JAN1N6472US/TR JAN1N6472US/TR Hersteller : Microsemi SD51A-1393052.pdf ESD Suppressors / TVS Diodes
Produkt ist nicht verfügbar