JAN1N5812 Microchip Technology
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Technische Details JAN1N5812 Microchip Technology
Description: DIODE GEN PURP 50V 20A DO203AA, Packaging: Bulk, Package / Case: DO-203AA, DO-4, Stud, Mounting Type: Stud Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 300pF @ 10V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: DO-203AA (DO-4), Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A, Current - Reverse Leakage @ Vr: 10 µA @ 50 V, Qualification: MIL-PRF-19500/478.
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JAN1N5812 | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 50V 20A DO203AA Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 300pF @ 10V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V Qualification: MIL-PRF-19500/478 |
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JAN1N5812 | Hersteller : Microchip / Microsemi |
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