JAN1N5807/TR Microchip Technology

Description: DIODE GEN PURP 50V 6A, Packaging: Tape & Reel (TR), Package / Case: B, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Capacitance @ Vr, F: 60pF @ 10V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: B, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A, Current - Reverse Leakage @ Vr: 5 µA @ 50 V, Qualification: MIL-PRF-19500/477.