JAN1N5768 Microchip Technology
Hersteller: Microchip Technology
Description: DIODE GEN PURP 300MA 10CFLATPACK
Packaging: Bulk
Package / Case: 10-CFlatPack
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: 10-CFlatPack
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 500 mA
Current - Reverse Leakage @ Vr: 100 nA @ 40 V
Description: DIODE GEN PURP 300MA 10CFLATPACK
Packaging: Bulk
Package / Case: 10-CFlatPack
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: 10-CFlatPack
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 500 mA
Current - Reverse Leakage @ Vr: 100 nA @ 40 V
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Technische Details JAN1N5768 Microchip Technology
Description: DIODE GEN PURP 300MA 10CFLATPACK, Packaging: Bulk, Package / Case: 10-CFlatPack, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 40 ns, Technology: Standard, Capacitance @ Vr, F: 4pF @ 0V, 1MHz, Current - Average Rectified (Io): 300mA, Supplier Device Package: 10-CFlatPack, Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 500 mA, Current - Reverse Leakage @ Vr: 100 nA @ 40 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| JAN1N5768 | Hersteller : Microsemi | Rectifiers Arrays |
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