![JAN1N5617 JAN1N5617](https://www.mouser.com/images/microsemi/lrg/A_Package_2_DSL.jpg)
auf Bestellung 232 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
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1+ | 6.85 EUR |
100+ | 6.35 EUR |
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Technische Details JAN1N5617 Microchip / Microsemi
Description: DIODE GEN PURP 400V 1A AXIAL, Packaging: Bulk, Package / Case: A, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: A, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A, Current - Reverse Leakage @ Vr: 500 nA @ 400 V, Qualification: MIL-PRF-19500/429.
Weitere Produktangebote JAN1N5617 nach Preis ab 6.39 EUR bis 6.88 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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JAN1N5617 | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V Qualification: MIL-PRF-19500/429 |
auf Bestellung 175 Stücke: Lieferzeit 10-14 Tag (e) |
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JAN1N5617 | Hersteller : Sensitron Semiconductors |
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Produkt ist nicht verfügbar |