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JAN1N3911 Microchip Technology
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Technische Details JAN1N3911 Microchip Technology
Description: DIODE GEN PURP 200V 30A DO5, Packaging: Bulk, Package / Case: DO-203AB, DO-5, Stud, Mounting Type: Stud Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 200 ns, Technology: Standard, Current - Average Rectified (Io): 30A, Supplier Device Package: DO-5 (DO-203AB), Operating Temperature - Junction: -65°C ~ 150°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A, Qualification: MIL-PRF-19500/308.
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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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JAN1N3911 | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 200V 30A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A Qualification: MIL-PRF-19500/308 |
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