IXXH50N60B3 IXYS
Hersteller: IXYSDescription: IGBT PT 600V 120A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 670µJ (on), 740µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 300+ | 10.30 EUR |
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Technische Details IXXH50N60B3 IXYS
Description: IGBT PT 600V 120A TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A, Supplier Device Package: TO-247AD (IXXH), IGBT Type: PT, Td (on/off) @ 25°C: 27ns/100ns, Switching Energy: 670µJ (on), 740µJ (off), Test Condition: 360V, 36A, 5Ohm, 15V, Gate Charge: 70 nC, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 600 W.
Weitere Produktangebote IXXH50N60B3 nach Preis ab 10.68 EUR bis 19.75 EUR
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auf Bestellung 75 Stücke: Lieferzeit 10-14 Tag (e) |
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IXXH50N60B3 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 600V 120A 600000mW 3-Pin(3+Tab) TO-247 |
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IXXH50N60B3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 600W Case: TO247-3 Mounting: THT Gate charge: 70nC Kind of package: tube Turn-off time: 320ns Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 200A Turn-on time: 75ns Anzahl je Verpackung: 300 Stücke |
Produkt ist nicht verfügbar |
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IXXH50N60B3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 600W Case: TO247-3 Mounting: THT Gate charge: 70nC Kind of package: tube Turn-off time: 320ns Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 200A Turn-on time: 75ns |
Produkt ist nicht verfügbar |