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IXTY44N10T IXYS
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Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO252
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 350 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
29+ | 2.53 EUR |
32+ | 2.29 EUR |
40+ | 1.79 EUR |
43+ | 1.7 EUR |
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Technische Details IXTY44N10T IXYS
Description: MOSFET N-CH 100V 44A TO252, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 22A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 25µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 25 V.
Weitere Produktangebote IXTY44N10T nach Preis ab 1.7 EUR bis 4.14 EUR
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IXTY44N10T | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 44A Power dissipation: 130W Case: TO252 On-state resistance: 30mΩ Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 60ns |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTY44N10T | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 22A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 25µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 25 V |
auf Bestellung 350 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTY44N10T | Hersteller : IXYS |
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auf Bestellung 1644 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTY44N10T | Hersteller : Littelfuse |
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