auf Bestellung 350 Stücke:
Lieferzeit 388-392 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 6.25 EUR |
| 10+ | 5.26 EUR |
| 25+ | 4.96 EUR |
| 70+ | 4.24 EUR |
| 280+ | 4.01 EUR |
| 560+ | 3.77 EUR |
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Technische Details IXTY01N100D IXYS
Description: MOSFET N-CH 1000V 400MA TO252AA, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Tc), Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 1.1W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 25µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V.
Weitere Produktangebote IXTY01N100D nach Preis ab 2.93 EUR bis 6.28 EUR
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IXTY01N100D | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 1000V 400MA TO252AAPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 1.1W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 25µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V |
auf Bestellung 6240 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTY01N100D | Hersteller : IXYS SEMICONDUCTOR |
Description: IXYS SEMICONDUCTOR - IXTY01N100D - Leistungs-MOSFET, n-Kanal, 1 kV, 400 mA, 50 ohm, TO-252, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 1kV rohsCompliant: YES Dauer-Drainstrom Id: 400mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 25W Bauform - Transistor: TO-252 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 0V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 50ohm |
auf Bestellung 233 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTY01N100D | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252; 2ns Mounting: SMD Power dissipation: 25W Gate charge: 0.1µC Polarisation: unipolar Drain current: 0.1A Kind of channel: depleted Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube Case: TO252 On-state resistance: 80Ω Reverse recovery time: 2ns Anzahl je Verpackung: 1 Stücke |
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IXTY01N100D | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252; 2ns Mounting: SMD Power dissipation: 25W Gate charge: 0.1µC Polarisation: unipolar Drain current: 0.1A Kind of channel: depleted Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube Case: TO252 On-state resistance: 80Ω Reverse recovery time: 2ns |
Produkt ist nicht verfügbar |