auf Bestellung 4480 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 33.09 EUR |
| 10+ | 30.22 EUR |
| 30+ | 28.42 EUR |
| 60+ | 27.88 EUR |
| 120+ | 26.49 EUR |
| 510+ | 23.28 EUR |
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Technische Details IXTX90P20P IXYS
Description: MOSFET P-CH 200V 90A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 22A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PLUS247™-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V.
Weitere Produktangebote IXTX90P20P nach Preis ab 26.03 EUR bis 33.48 EUR
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IXTX90P20P | Hersteller : Littelfuse Inc. |
 Description: MOSFET P-CH 200V 90A PLUS247-3Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 22A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTX90P20P | Hersteller : Littelfuse |
Trans MOSFET P-CH 200V 90A 3-Pin(3+Tab) PLUS 247 |
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IXTX90P20P | Hersteller : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -200V Drain current: -90A Power dissipation: 890W Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 44mΩ Mounting: THT Gate charge: 205nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 315ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTX90P20P | Hersteller : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -200V Drain current: -90A Power dissipation: 890W Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 44mΩ Mounting: THT Gate charge: 205nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 315ns |
Produkt ist nicht verfügbar |