IXTX90N25L2 Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 250V 90A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 690 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 60.12 EUR |
| 30+ | 49.85 EUR |
| 120+ | 46.73 EUR |
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Technische Details IXTX90N25L2 Littelfuse Inc.
Description: MOSFET N-CH 250V 90A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 3mA, Supplier Device Package: PLUS247™-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V.
Weitere Produktangebote IXTX90N25L2 nach Preis ab 45.14 EUR bis 60.56 EUR
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IXTX90N25L2 | Hersteller : IXYS |
MOSFET 90 Amps 250V |
auf Bestellung 270 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTX90N25L2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 90A Power dissipation: 960W Case: PLUS247™ On-state resistance: 36mΩ Mounting: THT Gate charge: 640nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 266ns Anzahl je Verpackung: 1 Stücke |
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IXTX90N25L2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 90A Power dissipation: 960W Case: PLUS247™ On-state resistance: 36mΩ Mounting: THT Gate charge: 640nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 266ns |
Produkt ist nicht verfügbar |