IXTX6N200P3HV Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 2000V 6A TO247PLUSHV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 3A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247PLUS-HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 108.29 EUR |
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Technische Details IXTX6N200P3HV Littelfuse Inc.
Description: MOSFET N-CH 2000V 6A TO247PLUSHV, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 4Ohm @ 3A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247PLUS-HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 2000 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V.
Weitere Produktangebote IXTX6N200P3HV nach Preis ab 91.85 EUR bis 109.08 EUR
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IXTX6N200P3HV | Hersteller : IXYS |
MOSFET MSFT N-CH STD-POLAR3 |
auf Bestellung 254 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTX6N200P3HV | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 2kV; 6A; 960W; 520ns Type of transistor: N-MOSFET Technology: Polar3™ Polarisation: unipolar Drain-source voltage: 2kV Drain current: 6A Power dissipation: 960W Case: TO247PLUS-HV On-state resistance: 4Ω Mounting: THT Gate charge: 143nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 520ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IXTX6N200P3HV | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 2kV; 6A; 960W; 520ns Type of transistor: N-MOSFET Technology: Polar3™ Polarisation: unipolar Drain-source voltage: 2kV Drain current: 6A Power dissipation: 960W Case: TO247PLUS-HV On-state resistance: 4Ω Mounting: THT Gate charge: 143nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 520ns |
Produkt ist nicht verfügbar |