Technische Details IXTX60N50L2 Littelfuse
Description: MOSFET N-CH 500V 60A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: PLUS247™-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V.
Weitere Produktangebote IXTX60N50L2
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IXTX60N50L2 | Hersteller : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns Kind of package: tube Type of transistor: N-MOSFET On-state resistance: 0.1Ω Features of semiconductor devices: linear power mosfet Gate charge: 610nC Drain current: 60A Kind of channel: enhanced Drain-source voltage: 500V Mounting: THT Reverse recovery time: 980ns Case: PLUS247™ Polarisation: unipolar Power dissipation: 960W Anzahl je Verpackung: 1 Stücke |
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IXTX60N50L2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 500V 60A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTX60N50L2 | Hersteller : IXYS |
MOSFETs 60 Amps 500V |
Produkt ist nicht verfügbar |
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IXTX60N50L2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns Kind of package: tube Type of transistor: N-MOSFET On-state resistance: 0.1Ω Features of semiconductor devices: linear power mosfet Gate charge: 610nC Drain current: 60A Kind of channel: enhanced Drain-source voltage: 500V Mounting: THT Reverse recovery time: 980ns Case: PLUS247™ Polarisation: unipolar Power dissipation: 960W |
Produkt ist nicht verfügbar |