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IXTX210P10T

IXTX210P10T IXYS

IXTX210P10T.pdf Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -210A
Power dissipation: 1.04kW
Case: PLUS247™
Gate-source voltage: ±15V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 740nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
3+29.97 EUR
Mindestbestellmenge: 3
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Technische Details IXTX210P10T IXYS

Description: MOSFET P-CH 100V 210A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 210A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 105A, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V.

Weitere Produktangebote IXTX210P10T nach Preis ab 29.97 EUR bis 49.6 EUR

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IXTX210P10T IXTX210P10T Hersteller : IXYS IXTX210P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -210A
Power dissipation: 1.04kW
Case: PLUS247™
Gate-source voltage: ±15V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 740nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3+29.97 EUR
Mindestbestellmenge: 3
IXTX210P10T IXTX210P10T Hersteller : IXYS media-3323045.pdf MOSFET P-Channel: Standard MOSFET
auf Bestellung 136 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+49.24 EUR
10+ 43.77 EUR
30+ 40.81 EUR
60+ 39.56 EUR
120+ 38.3 EUR
IXTX210P10T IXTX210P10T Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_p-channel_ixt_210p10t_datasheet.pdf.pdf Description: MOSFET P-CH 100V 210A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 105A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V
auf Bestellung 217 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+49.6 EUR
30+ 41.12 EUR
120+ 38.55 EUR
IXTX210P10T IXTX210P10T Hersteller : Littelfuse use_discrete_mosfets_p-channel_ixt_210p10t_datasheet.pdf.pdf Trans MOSFET P-CH 100V 210A 3-Pin(3+Tab) PLUS 247
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