
IXTX210P10T IXYS

Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Reverse recovery time: 200ns
Drain-source voltage: -100V
Drain current: -210A
On-state resistance: 7.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Gate charge: 740nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
3+ | 30.95 EUR |
30+ | 30.43 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTX210P10T IXYS
Description: MOSFET P-CH 100V 210A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 210A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 105A, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V.
Weitere Produktangebote IXTX210P10T nach Preis ab 30.43 EUR bis 50.64 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IXTX210P10T | Hersteller : IXYS |
![]() Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W Case: PLUS247™ Mounting: THT Kind of package: tube Reverse recovery time: 200ns Drain-source voltage: -100V Drain current: -210A On-state resistance: 7.5mΩ Type of transistor: P-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Gate charge: 740nC Technology: TrenchP™ Kind of channel: enhancement Gate-source voltage: ±15V |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
![]() |
IXTX210P10T | Hersteller : IXYS |
![]() |
auf Bestellung 238 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
![]() |
IXTX210P10T | Hersteller : Littelfuse Inc. |
Description: MOSFET P-CH 100V 210A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 105A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V |
auf Bestellung 194 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
![]() |
IXTX210P10T | Hersteller : Littelfuse |
![]() |
Produkt ist nicht verfügbar |