![IXTT90P10P IXTT90P10P](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/202/TO-268.jpg)
IXTT90P10P Littelfuse Inc.
![littelfuse_discrete_mosfets_p-channel_ixt_90p10p_datasheet.pdf.pdf](/images/adobe-acrobat.png)
Description: MOSFET P-CH 100V 90A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 45A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
auf Bestellung 178 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 20.52 EUR |
30+ | 16.61 EUR |
120+ | 15.64 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTT90P10P Littelfuse Inc.
Description: MOSFET P-CH 100V 90A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 45A, 10V, Power Dissipation (Max): 462W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V.
Weitere Produktangebote IXTT90P10P nach Preis ab 17.88 EUR bis 20.68 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||
---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IXTT90P10P | Hersteller : IXYS |
![]() |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
![]() |
IXTT90P10P | Hersteller : Littelfuse |
![]() |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||
![]() |
IXTT90P10P | Hersteller : Littelfuse |
![]() |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||
![]() |
IXTT90P10P | Hersteller : Littelfuse |
![]() |
Produkt ist nicht verfügbar |
|||||||
![]() |
IXTT90P10P | Hersteller : IXYS |
![]() Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO268 Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -90A Power dissipation: 462W Case: TO268 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 144ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||
![]() |
IXTT90P10P | Hersteller : IXYS |
![]() Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO268 Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -90A Power dissipation: 462W Case: TO268 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 144ns |
Produkt ist nicht verfügbar |