IXTT82N25P IXYS
Hersteller: IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Gate charge: 142nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 200ns
Drain-source voltage: 250V
Drain current: 82A
On-state resistance: 38mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 10.22 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTT82N25P IXYS
Description: MOSFET N-CH 250V 82A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 82A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 41A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V.
Weitere Produktangebote IXTT82N25P nach Preis ab 10.22 EUR bis 19.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IXTT82N25P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO268 Case: TO268 Mounting: SMD Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 500W Polarisation: unipolar Gate charge: 142nC Technology: PolarHT™ Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 200ns Drain-source voltage: 250V Drain current: 82A On-state resistance: 38mΩ |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
IXTT82N25P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 250V 82A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 41A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V |
auf Bestellung 480 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
IXTT82N25P | Hersteller : IXYS |
MOSFET 82 Amps 250V 0.035 Rds |
auf Bestellung 280 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
IXTT82N25P | Hersteller : Littelfuse |
Trans MOSFET N-CH 250V 82A 3-Pin(2+Tab) TO-268 |
Produkt ist nicht verfügbar |