Produkte > LITTELFUSE > IXTT34N65X2HV
IXTT34N65X2HV

IXTT34N65X2HV Littelfuse


ets_n-channel_ultra_junction_ixtt34n65x2hv_datasheet.pdf.pdf Hersteller: Littelfuse
Trans MOSFET N-CH 650V 34A 3-Pin(2+Tab) D3PAK
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details IXTT34N65X2HV Littelfuse

Description: MOSFET N-CH 650V 34A TO268HV, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-268HV (IXTT), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V.

Weitere Produktangebote IXTT34N65X2HV

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IXTT34N65X2HV IXTT34N65X2HV Hersteller : IXYS IXTT34N65X2HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO268HV; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO268HV
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTT34N65X2HV IXTT34N65X2HV Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtt34n65x2hv_datasheet.pdf.pdf Description: MOSFET N-CH 650V 34A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Produkt ist nicht verfügbar
IXTT34N65X2HV IXTT34N65X2HV Hersteller : IXYS media-3322207.pdf MOSFETs TO268 650V 34A N-CH X4CLASS
Produkt ist nicht verfügbar
IXTT34N65X2HV IXTT34N65X2HV Hersteller : IXYS IXTT34N65X2HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO268HV; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO268HV
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
Produkt ist nicht verfügbar