IXTT30N50L2 Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 500V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 28.48 EUR |
| 30+ | 23.05 EUR |
| 120+ | 21.7 EUR |
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Technische Details IXTT30N50L2 Littelfuse Inc.
Description: MOSFET N-CH 500V 30A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V.
Weitere Produktangebote IXTT30N50L2 nach Preis ab 21.86 EUR bis 28.69 EUR
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IXTT30N50L2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO268 Features of semiconductor devices: linear power mosfet Gate charge: 240nC Kind of channel: enhanced Reverse recovery time: 0.5µs Drain-source voltage: 500V Drain current: 30A On-state resistance: 0.215Ω Type of transistor: N-MOSFET Power dissipation: 400W Anzahl je Verpackung: 1 Stücke |
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IXTT30N50L2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO268 Features of semiconductor devices: linear power mosfet Gate charge: 240nC Kind of channel: enhanced Reverse recovery time: 0.5µs Drain-source voltage: 500V Drain current: 30A On-state resistance: 0.215Ω Type of transistor: N-MOSFET Power dissipation: 400W |
Produkt ist nicht verfügbar |