auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 80.31 EUR |
| 10+ | 75.79 EUR |
| 30+ | 68.31 EUR |
| 60+ | 67 EUR |
| 120+ | 63.92 EUR |
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Technische Details IXTT2N300P3HV IXYS
Description: MOSFET N-CH 3000V 2A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 21Ohm @ 1A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-268HV (IXTT), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 3000 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V.
Weitere Produktangebote IXTT2N300P3HV nach Preis ab 63.28 EUR bis 80.92 EUR
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IXTT2N300P3HV | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 3000V 2A TO268Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 21Ohm @ 1A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-268HV (IXTT) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 3000 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V |
auf Bestellung 245 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTT2N300P3HV | Hersteller : Littelfuse |
Power Mosfet |
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IXTT2N300P3HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO268HV; 400ns Mounting: SMD Case: TO268HV Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 520W On-state resistance: 21Ω Kind of package: tube Drain current: 2A Drain-source voltage: 3kV Reverse recovery time: 400ns Features of semiconductor devices: standard power mosfet Gate charge: 73nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTT2N300P3HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO268HV; 400ns Mounting: SMD Case: TO268HV Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 520W On-state resistance: 21Ω Kind of package: tube Drain current: 2A Drain-source voltage: 3kV Reverse recovery time: 400ns Features of semiconductor devices: standard power mosfet Gate charge: 73nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |