auf Bestellung 300 Stücke:
Lieferzeit 410-414 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 33.81 EUR |
| 10+ | 31.19 EUR |
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Technische Details IXTT16N50D2 IXYS
Description: MOSFET N-CH 500V 16A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 8A, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 695W (Tc), Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V.
Weitere Produktangebote IXTT16N50D2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IXTT16N50D2 | Hersteller : Littelfuse |
 Trans MOSFET N-CH 500V 3-Pin(2+Tab) TO-268 |
Produkt ist nicht verfügbar |
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IXTT16N50D2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 695W Case: TO268 On-state resistance: 0.3Ω Mounting: SMD Kind of package: tube Kind of channel: depleted Reverse recovery time: 130ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTT16N50D2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 500V 16A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 8A, 0V FET Feature: Depletion Mode Power Dissipation (Max): 695W (Tc) Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTT16N50D2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 695W Case: TO268 On-state resistance: 0.3Ω Mounting: SMD Kind of package: tube Kind of channel: depleted Reverse recovery time: 130ns |
Produkt ist nicht verfügbar |