IXTT12N150HV Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 1500V 12A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
auf Bestellung 1440 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 87.89 EUR |
| 30+ | 77.24 EUR |
| 120+ | 71.91 EUR |
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Technische Details IXTT12N150HV Littelfuse Inc.
Description: MOSFET N-CH 1500V 12A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1500 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V.
Weitere Produktangebote IXTT12N150HV nach Preis ab 73.94 EUR bis 88.53 EUR
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IXTT12N150HV | Hersteller : IXYS |
MOSFET MSFT N-CH STD-HI VOLTAGE |
auf Bestellung 57 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTT12N150HV | Hersteller : Littelfuse |
Trans MOSFET N-CH 1.5KV 12A |
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IXTT12N150HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO268HV; 1.2us Drain-source voltage: 1.5kV Drain current: 12A Type of transistor: N-MOSFET Power dissipation: 890W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 106nC Kind of channel: enhanced Mounting: SMD Case: TO268HV Reverse recovery time: 1.2µs Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTT12N150HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO268HV; 1.2us Drain-source voltage: 1.5kV Drain current: 12A Type of transistor: N-MOSFET Power dissipation: 890W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 106nC Kind of channel: enhanced Mounting: SMD Case: TO268HV Reverse recovery time: 1.2µs |
Produkt ist nicht verfügbar |