Produkte > IXYS > IXTT12N150
IXTT12N150

IXTT12N150 IXYS


media-3319635.pdf Hersteller: IXYS
MOSFET 1500V High Voltage Power MOSFET
auf Bestellung 1 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+26.89 EUR
10+ 26.88 EUR
30+ 23.97 EUR
60+ 23.69 EUR
120+ 20.72 EUR
Produktrezensionen
Produktbewertung abgeben

Technische Details IXTT12N150 IXYS

Description: MOSFET N-CH 1500V 12A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 6A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1500 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V.

Weitere Produktangebote IXTT12N150 nach Preis ab 17.66 EUR bis 20.97 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IXTT12N150 Hersteller : Littelfuse media.pdf Trans MOSFET N-CH 1.5KV 12A 3-Pin(2+Tab) TO-268AA
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
8+20.97 EUR
10+ 18.73 EUR
25+ 17.66 EUR
Mindestbestellmenge: 8
IXTT12N150 IXTT12N150 Hersteller : Littelfuse rete_mosfets_n-channel_standard_ixtt12n150_datasheet.pdf.pdf Trans MOSFET N-CH 1.5KV 12A 3-Pin(2+Tab) TO-268AA
Produkt ist nicht verfügbar
IXTT12N150 Hersteller : Littelfuse media.pdf Trans MOSFET N-CH 1.5KV 12A 3-Pin(2+Tab) TO-268AA
Produkt ist nicht verfügbar
IXTT12N150 Hersteller : Littelfuse media.pdf Trans MOSFET N-CH 1.5KV 12A 3-Pin(2+Tab) TO-268AA
Produkt ist nicht verfügbar
IXTT12N150 IXTT12N150 Hersteller : IXYS IXT_12N150.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO268; 1.2us
Drain-source voltage: 1.5kV
Drain current: 12A
On-state resistance: 2.2Ω
Type of transistor: N-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 106nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: SMD
Case: TO268
Reverse recovery time: 1.2µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTT12N150 IXTT12N150 Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixth12n150_datasheet.pdf.pdf Description: MOSFET N-CH 1500V 12A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 6A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
Produkt ist nicht verfügbar
IXTT12N150 IXTT12N150 Hersteller : IXYS IXT_12N150.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO268; 1.2us
Drain-source voltage: 1.5kV
Drain current: 12A
On-state resistance: 2.2Ω
Type of transistor: N-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 106nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: SMD
Case: TO268
Reverse recovery time: 1.2µs
Produkt ist nicht verfügbar