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IXTQ36N50P Littelfuse Inc.
![littelfuse_discrete_mosfets_n-channel_standard_ixt_36n50p_datasheet.pdf.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 500V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
auf Bestellung 195 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 12.28 EUR |
30+ | 10.3 EUR |
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Technische Details IXTQ36N50P Littelfuse Inc.
Description: MOSFET N-CH 500V 36A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V.
Weitere Produktangebote IXTQ36N50P nach Preis ab 10.41 EUR bis 15.34 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTQ36N50P | Hersteller : IXYS |
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auf Bestellung 264 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ36N50P | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO3P; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 36A Power dissipation: 540W Case: TO3P On-state resistance: 0.17Ω Mounting: THT Gate charge: 82nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 270 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTQ36N50P | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO3P; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 36A Power dissipation: 540W Case: TO3P On-state resistance: 0.17Ω Mounting: THT Gate charge: 82nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns |
auf Bestellung 270 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTQ36N50P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTQ36N50P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |