IXTQ30N60P IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO3P
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 540W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 11.41 EUR |
| 9+ | 8.21 EUR |
| 10+ | 7.76 EUR |
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Technische Details IXTQ30N60P IXYS
Description: MOSFET N-CH 600V 30A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3P, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V.
Weitere Produktangebote IXTQ30N60P nach Preis ab 7.76 EUR bis 16.19 EUR
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IXTQ30N60P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO3P Features of semiconductor devices: standard power mosfet Gate charge: 82nC Kind of channel: enhanced Reverse recovery time: 0.5µs Drain-source voltage: 600V Drain current: 30A On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 540W |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTQ30N60P | Hersteller : IXYS |
MOSFETs 30.0 Amps 600 V 0.24 Ohm Rds |
auf Bestellung 19 Stücke: Lieferzeit 332-336 Tag (e) |
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IXTQ30N60P | Hersteller : Littelfuse |
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-3P |
Produkt ist nicht verfügbar |
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IXTQ30N60P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 600V 30A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V Power Dissipation (Max): 540W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V |
Produkt ist nicht verfügbar |