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IXTQ26N50P

IXTQ26N50P IXYS

IXTQ(T,V)26N50P_S.pdf Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO3P; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 301 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+7.94 EUR
12+ 6.02 EUR
30+ 5.88 EUR
Mindestbestellmenge: 10
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Technische Details IXTQ26N50P IXYS

Description: MOSFET N-CH 500V 26A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V.

Weitere Produktangebote IXTQ26N50P nach Preis ab 5.88 EUR bis 8.59 EUR

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IXTQ26N50P IXTQ26N50P Hersteller : IXYS IXTQ(T,V)26N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO3P; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
auf Bestellung 301 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
10+7.94 EUR
12+ 6.02 EUR
30+ 5.88 EUR
Mindestbestellmenge: 10
IXTQ26N50P IXTQ26N50P Hersteller : IXYS media-3322826.pdf MOSFETs 26.0 Amps 500 V 0.23 Ohm Rds
auf Bestellung 295 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+8.59 EUR
10+ 7.78 EUR
30+ 7.32 EUR
120+ 7.2 EUR
510+ 6.69 EUR
IXTQ26N50P(Transistor) IXTQ26N50P(Transistor)
Produktcode: 94734 		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IXTQ26N50P IXTQ26N50P Hersteller : Littelfuse media.pdf Trans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-3P
Produkt ist nicht verfügbar
IXTQ26N50P IXTQ26N50P Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_26n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 26A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Produkt ist nicht verfügbar