IXTQ22N60P Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 600V 22A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 6.05 EUR |
| 30+ | 4.8 EUR |
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Technische Details IXTQ22N60P Littelfuse Inc.
Description: MOSFET N-CH 600V 22A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V.
Weitere Produktangebote IXTQ22N60P nach Preis ab 6.69 EUR bis 6.69 EUR
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auf Bestellung 198 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ22N60P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P Type of transistor: N-MOSFET Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 400W Case: TO3P Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 0.5µs Anzahl je Verpackung: 1 Stücke |
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IXTQ22N60P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P Type of transistor: N-MOSFET Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 400W Case: TO3P Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 0.5µs |
Produkt ist nicht verfügbar |