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IXTQ16N50P

IXTQ16N50P Littelfuse Inc.


media?resourcetype=datasheets&itemid=19BC6D28-7D7C-450A-98BC-0B3E7D6BA112&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-16N50P-Datasheet.PDF Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 500V 16A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 523 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4 EUR
30+ 3.16 EUR
120+ 2.71 EUR
510+ 2.65 EUR
Mindestbestellmenge: 5
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Technische Details IXTQ16N50P Littelfuse Inc.

Description: MOSFET N-CH 500V 16A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V.

Weitere Produktangebote IXTQ16N50P nach Preis ab 5.51 EUR bis 71.5 EUR

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Preis ohne MwSt
IXTQ16N50P IXTQ16N50P Hersteller : IXYS IXTP16N50P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+71.5 EUR
3+ 23.84 EUR
5+ 14.3 EUR
13+ 5.51 EUR
IXTQ16N50P IXTQ16N50P Hersteller : IXYS IXTP16N50P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+71.5 EUR
IXTQ16N50P IXTQ16N50P Hersteller : Littelfuse media.pdf Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-3P
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IXTQ16N50P IXTQ16N50P Hersteller : IXYS media-3319677.pdf MOSFET 16.0 Amps 500 V 0.4 Ohm Rds
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