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IXTQ120N15P IXYS
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Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO3P
Case: TO3P
Mounting: THT
Kind of package: tube
Reverse recovery time: 150ns
Drain-source voltage: 150V
Drain current: 120A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 600W
Polarisation: unipolar
Gate charge: 150nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
7+ | 10.38 EUR |
8+ | 8.94 EUR |
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Technische Details IXTQ120N15P IXYS
Description: MOSFET N-CH 150V 120A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V.
Weitere Produktangebote IXTQ120N15P nach Preis ab 8.94 EUR bis 10.38 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTQ120N15P | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO3P Case: TO3P Mounting: THT Kind of package: tube Reverse recovery time: 150ns Drain-source voltage: 150V Drain current: 120A On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 600W Polarisation: unipolar Gate charge: 150nC Technology: PolarHT™ Kind of channel: enhanced Gate-source voltage: ±20V |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTQ120N15P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTQ120N15P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTQ120N15P | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTQ120N15P | Hersteller : IXYS |
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Produkt ist nicht verfügbar |