IXTQ110N10P Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 100V 110A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 25 V
auf Bestellung 720 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 11.39 EUR |
| 30+ | 9.1 EUR |
| 120+ | 8.14 EUR |
| 510+ | 7.18 EUR |
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Technische Details IXTQ110N10P Littelfuse Inc.
Description: MOSFET N-CH 100V 110A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 25 V.
Weitere Produktangebote IXTQ110N10P nach Preis ab 8.96 EUR bis 11.48 EUR
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Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 480W Case: TO3P Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 130ns Anzahl je Verpackung: 1 Stücke |
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IXTQ110N10P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 480W Case: TO3P Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 130ns |
Produkt ist nicht verfügbar |