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IXTP60N20X4

IXTP60N20X4 IXYS


media-3320538.pdf Hersteller: IXYS
MOSFETs 200V, 60A current capacity, Ultra junction X4, TO-220 package, MOSFET
auf Bestellung 250 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+16.33 EUR
10+16.12 EUR
50+9.72 EUR
100+9.33 EUR
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Technische Details IXTP60N20X4 IXYS

Description: MOSFET ULTRA X4 200V 60A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220 (IXTP), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V.

Weitere Produktangebote IXTP60N20X4 nach Preis ab 9.28 EUR bis 16.74 EUR

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IXTP60N20X4 IXTP60N20X4 Hersteller : Littelfuse Inc. IXTP60N20X4_DS.pdf Description: MOSFET ULTRA X4 200V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 (IXTP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
auf Bestellung 243 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.74 EUR
50+9.94 EUR
100+9.28 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH