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IXTP48P05T IXYS
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Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 30ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.76 EUR |
50+ | 2.82 EUR |
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Technische Details IXTP48P05T IXYS
Description: MOSFET P-CH 50V 48A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V.
Weitere Produktangebote IXTP48P05T nach Preis ab 3.45 EUR bis 6.71 EUR
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IXTP48P05T | Hersteller : IXYS |
![]() Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -50V Drain current: -48A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 30mΩ Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 30ns |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP48P05T | Hersteller : Littelfuse |
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auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP48P05T | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V |
auf Bestellung 1254 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP48P05T | Hersteller : IXYS |
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auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP48P05T | Hersteller : Littelfuse |
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