![IXTP3N100D2 IXTP3N100D2](https://www.mouser.com/images/mouserelectronics/lrg/TO_220_AB_3_SPL.jpg)
auf Bestellung 2109 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 7.37 EUR |
10+ | 6.37 EUR |
50+ | 5.84 EUR |
100+ | 5.02 EUR |
250+ | 4.84 EUR |
500+ | 4.54 EUR |
1000+ | 3.84 EUR |
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Technische Details IXTP3N100D2 IXYS
Description: MOSFET N-CH 1000V 3A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1.5A, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 125W (Tc), Supplier Device Package: TO-220-3, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V.
Weitere Produktangebote IXTP3N100D2 nach Preis ab 5.85 EUR bis 7.39 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTP3N100D2 | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1.5A, 0V FET Feature: Depletion Mode Power Dissipation (Max): 125W (Tc) Supplier Device Package: TO-220-3 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V |
auf Bestellung 52 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP3N100D2 | Hersteller : Littelfuse |
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auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP3N100D2 Produktcode: 163724 |
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Produkt ist nicht verfügbar
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IXTP3N100D2 | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTP3N100D2 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3A Power dissipation: 125W Case: TO220AB On-state resistance: 5.5Ω Mounting: THT Gate charge: 1.02µC Kind of package: tube Kind of channel: depleted Reverse recovery time: 17ns |
Produkt ist nicht verfügbar |
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IXTP3N100D2 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3A Power dissipation: 125W Case: TO220AB On-state resistance: 5.5Ω Mounting: THT Gate charge: 1.02µC Kind of package: tube Kind of channel: depleted Reverse recovery time: 17ns |
Produkt ist nicht verfügbar |