IXTP1R6N50D2 IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO220AB; 400ns
Mounting: THT
Gate charge: 23.7nC
Kind of channel: depleted
Gate-source voltage: ±20V
Case: TO220AB
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 1.6A
On-state resistance: 2.3Ω
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Kind of package: tube
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 24+ | 3.05 EUR |
| 27+ | 2.72 EUR |
| 33+ | 2.19 EUR |
| 35+ | 2.06 EUR |
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Technische Details IXTP1R6N50D2 IXYS
Description: MOSFET N-CH 500V 1.6A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 100W (Tc), Supplier Device Package: TO-220-3, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V.
Weitere Produktangebote IXTP1R6N50D2 nach Preis ab 2.02 EUR bis 5.84 EUR
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IXTP1R6N50D2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO220AB; 400ns Mounting: THT Gate charge: 23.7nC Kind of channel: depleted Gate-source voltage: ±20V Case: TO220AB Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 1.6A On-state resistance: 2.3Ω Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 161 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP1R6N50D2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 500V 1.6A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 100W (Tc) Supplier Device Package: TO-220-3 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V |
auf Bestellung 129 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP1R6N50D2 | Hersteller : IXYS |
MOSFET N-CH MOSFETS (D2) 500V 1.6A |
auf Bestellung 347 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP1R6N50D2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 1.6A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXTP1R6N50D2 | Hersteller : LITTELFUSE |
Description: LITTELFUSE - IXTP1R6N50D2 - MOSFET, N-CH, 500V, 1.6A, TO-220 Transistormontage: Through Hole Drain-Source-Spannung Vds: 500 Dauer-Drainstrom Id: 1.6 Rds(on)-Messspannung Vgs: 0 Verlustleistung Pd: 100 Bauform - Transistor: TO-220 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: N Channel Betriebswiderstand, Rds(on): 2.3 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: - SVHC: To Be Advised |
Produkt ist nicht verfügbar |
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IXTP1R6N50D2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 1.6A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |