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IXTP1R6N100D2

IXTP1R6N100D2 IXYS

IXTA(P,Y)1R6N100D2.pdf Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: THT
Gate charge: 645nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 11ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 177 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
24+3.05 EUR
27+ 2.72 EUR
33+ 2.17 EUR
35+ 2.06 EUR
250+ 2.02 EUR
Mindestbestellmenge: 24
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Technische Details IXTP1R6N100D2 IXYS

Description: MOSFET N-CH 1000V 1.6A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 100W (Tc), Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V.

Weitere Produktangebote IXTP1R6N100D2 nach Preis ab 2.06 EUR bis 5.79 EUR

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IXTP1R6N100D2 IXTP1R6N100D2 Hersteller : IXYS IXTA(P,Y)1R6N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: THT
Gate charge: 645nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 11ns
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
24+3.05 EUR
27+ 2.72 EUR
33+ 2.17 EUR
35+ 2.06 EUR
Mindestbestellmenge: 24
IXTP1R6N100D2 IXTP1R6N100D2 Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_1r6n100_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 1.6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
auf Bestellung 1006 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.76 EUR
50+ 4.56 EUR
100+ 3.91 EUR
500+ 3.47 EUR
1000+ 2.97 EUR
Mindestbestellmenge: 4
IXTP1R6N100D2 IXTP1R6N100D2 Hersteller : IXYS media-3322551.pdf MOSFET N-CH MOSFETS (D2) 1000V 1.6A
auf Bestellung 550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.79 EUR
10+ 5.03 EUR
50+ 4.58 EUR
100+ 3.92 EUR
250+ 3.82 EUR
500+ 3.57 EUR
1000+ 3.17 EUR
IXTP1R6N100D2 IXTP1R6N100D2 Hersteller : Littelfuse sfets_n-channel_depletion_mode_ixt_1r6n100_datasheet.pdf.pdf Trans MOSFET N-CH 1KV 1.6A 3-Pin(3+Tab) TO-220AB
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