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IXTP18P10T

IXTP18P10T IXYS

IXT_18P10T.pdf Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 62ns
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
33+2.2 EUR
37+ 1.96 EUR
41+ 1.77 EUR
43+ 1.67 EUR
50+ 1.66 EUR
Mindestbestellmenge: 33
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Technische Details IXTP18P10T IXYS

Description: MOSFET P-CH 100V 18A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V.

Weitere Produktangebote IXTP18P10T nach Preis ab 1.66 EUR bis 4.36 EUR

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IXTP18P10T IXTP18P10T Hersteller : IXYS IXT_18P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 62ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 251 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
33+2.2 EUR
37+ 1.96 EUR
41+ 1.77 EUR
43+ 1.67 EUR
50+ 1.66 EUR
Mindestbestellmenge: 33
IXTP18P10T IXTP18P10T Hersteller : IXYS media-3320772.pdf MOSFETs 18 Amps 100V 0.12 Rds
auf Bestellung 334 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.35 EUR
10+ 3.15 EUR
100+ 2.57 EUR
250+ 2.48 EUR
500+ 2.43 EUR
1000+ 2.29 EUR
IXTP18P10T IXTP18P10T Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_p-channel_ixt_18p10t_datasheet.pdf.pdf Description: MOSFET P-CH 100V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 1712 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.36 EUR
50+ 3.51 EUR
100+ 2.89 EUR
500+ 2.44 EUR
1000+ 2.07 EUR
Mindestbestellmenge: 5
IXTP18P10T IXTP18P10T Hersteller : Littelfuse fuse_discrete_mosfets_p-channel_ixt_18p10t_datasheet.pdf.pdf Trans MOSFET P-CH 100V 18A 3-Pin(3+Tab) TO-220AB
Produkt ist nicht verfügbar
IXTP18P10T IXTP18P10T Hersteller : Littelfuse media.pdf Trans MOSFET P-CH 100V 18A 3-Pin(3+Tab) TO-220AB
Produkt ist nicht verfügbar
IXTP18P10T IXTP18P10T Hersteller : Littelfuse media.pdf Trans MOSFET P-CH 100V 18A 3-Pin(3+Tab) TO-220AB
Produkt ist nicht verfügbar