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IXTP180N10T Littelfuse Inc.
![littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_180n10t_datasheet.pdf.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 100V 180A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 3145 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.35 EUR |
50+ | 8.26 EUR |
100+ | 7.39 EUR |
500+ | 6.52 EUR |
1000+ | 5.87 EUR |
2000+ | 5.5 EUR |
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Technische Details IXTP180N10T Littelfuse Inc.
Description: MOSFET N-CH 100V 180A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V.
Weitere Produktangebote IXTP180N10T nach Preis ab 6.46 EUR bis 10.42 EUR
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IXTP180N10T | Hersteller : IXYS |
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auf Bestellung 358 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP180N10T | Hersteller : Littelfuse |
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IXTP180N10T | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTP180N10T | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTP180N10T | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 480W Case: TO220AB On-state resistance: 6.4mΩ Mounting: THT Gate charge: 151nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 72ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTP180N10T | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 480W Case: TO220AB On-state resistance: 6.4mΩ Mounting: THT Gate charge: 151nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 72ns |
Produkt ist nicht verfügbar |